PART |
Description |
Maker |
IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管) 500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
APT8GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 17A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT12GT60KR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 25A
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
SG12N06DT SG12N06T |
Discrete IGBTs
|
Sirectifier Semiconductors Sirectifier Global Corp.
|
IXBH16N170 IXBT16N170 |
Discrete IGBTs
|
IXYS
|
AOTS40B65H1 |
IGBT Discrete IGBTs
|
Alpha & Omega Semiconductor
|
GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
GT40WR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IXBN75N170A |
Discrete IGBTs BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|